Izinto zokwakha nezimpawu ze-Ceramic substrates

Ngenqubekela phambili kanye nentuthuko yezobuchwepheshe, izinga lokushisa lamanje, lokusebenza kanye nemvamisa kumadivayisi bekulokhu kuphakama kancane kancane. Ukuze uhlangabezane nokwethenjwa kwamadivayisi namasekethe, izidingo eziphakeme zibekwe phambili kubathwali be-chip. I-Ceramic substrates isetshenziswa kabanzi kulezi zinkambu ngenxa yezakhiwo zazo ezinhle kakhulu ezishisayo, izakhiwo ze-microwave, izakhiwo zemishini kanye nokwethenjwa okuphezulu.

Njengamanje, izinto eziphambili ze-ceramic ezisetshenziswe kuma-ceramic substrates yilezi: alumina (al2o3), i-aluminum nitride (i-aluminum nitride (i-silicon nitride (i-silicon carbide (i-silicon Carbide (i-SIC) ne -beryllium oxide (beo).

Ukuqina Ukusebenza i-

Ma Terial		Ukuhlanzeka okushisayo	okushisayo	(W / KM)	kwensimu okuphazamisayo	okuphazamisayo (KV / mm ^ (- 1))	Ama-Fomme amafushane we -NT s
Al2o3	99%	29	9.7	10	Ukusebenza kwezindleko okuhle kakhulu, Izicelo eziningi ezibanzi
ALN	99%	150	8.9	okuphezulu	, Kepha kubiza kakhulu
i-beo	I-99%	310	6.4	10	I-powder enobuthi kakhulu, umkhawulo wokusebenzisa
SI3N4	99%	106	9.4	100 100.40	100.40.40
%	270	40	0.7	Finyelela izinhlelo zokusebenza ezivame	kakhulu

Ake sibheke izici ezimfishane zalawa ma-ceramics ama-5 athuthukile ezigatshana ezilandelayo:

1. I-Alumina (Al2o3)

I-Al2o3 Hologenous Polycrystals ingafinyelela ngaphezu kwezinhlobo eziyi-10, futhi izinhlobo eziphambili zekristalu zimi ngokulandelayo: α-al2o3, γ-al2o3 ne-Zta-Al2o3 neZta-Al2o3 neZta-Al2o3 neZta-Al2o3 neZta-Al2o3 neZta-Al2o3 neZta-Al2o3 neZta-Al2o3 neZta-Al2o3 naseZta-Al2o3 naseZta-Al2o3 naseZta-Al2o3 naseZta-Al2o3 naseZta-Al2o3 naseZta-Al2o3 naseZta-Al2o3 neZta-Al2o3. Phakathi kwazo, i-α-al2o3 inomsebenzi ophansi kakhulu futhi izinzile kakhulu phakathi kwamafomu amane aphambili ekristalu, kanti iseli yalo leyunithi liyi-rhombohedron ekhonjiwe, elingohlelo lwe-hexagonal crystal system. Isakhiwo se-α-al2o3 siqinile, isakhiwo se-Corundum, singaba khona impela kuwo wonke amazinga okushisa; Lapho amazinga okushisa efinyelela ku-1000 ~ 1600 ° C, okunye ukuhlukahluka kuzoguqukela ngokungenakuphikiswa kube yi-α-al2o3.

Umdwebo 1: I-Crystal Microsoft ye-Al2o3 Ngaphansi Sem

Ngokukhuphuka kwengxenyeni enkulu ye-Al2o3 kanye nokwehla kwengxenye yesigaba sesigaba sengilazi esihambisanayo, ukuthuthuka okushisayo kwama-al2o3 ceramics kukhuphuka ngokushesha, kwathi lapho ingxenye enkulu ye-Al2o3 ifinyelela kuma-99%, ukuhambisa kwayo okushisayo kuphindeka kabili uma kuqhathaniswa nengxenyana enkulu 90%.

Yize kukhuphuka ingxenye enkulu ye-Al2o3 ingathuthukisa ukusebenza okuphelele kwama-ceramics, futhi kwandisa izinga lokushisa le-ceramics, eliholela ngokungaqondile ekukhuphukeni kwezindleko zokukhiqiza.

2. I-Aluminium Nitride (ALN)

I-ALN uhlobo lweqembu ⅲ-v luhlanganisiwe ngesakhiwo seWortzite. Iseli yayo yeyunithi i-ALN4 Tetrahedron, okungoluhlelo lwe-Hexagonal Crystal futhi inesibopho esiqinile se-Combared, ngakho-ke inezakhiwo ezinhle kakhulu zemishini kanye namandla aphezulu agoba. Ngokweqiniso, inqwaba yayo ye-crystal yi-3.2611G / CM3, ngakho-ke inokuphamba okuphezulu okushisayo, futhi i-aln crystal emsulwa inokuvuselelwa kwekamelo okungu-320W / (m · I-substrate ingafinyelela ku-150w / (m · k), okungamahlandla angaphezu kwezi-5 e-Al2o3. I-coefficion ebabazekayo ye-Thermal

AlN powder

Umdwebo 2: I-Powder of Aluminium NITride

I-Aln Ceramics inokuvuka okuphezulu okushisayo kune-al2o3 ceramics, kancane kancane ithathe indawo ye-al2o3 ceramics kuma-elekthronikhi wamandla aphezulu namanye amadivaysi adinga amathuba okushisa aphezulu, futhi anethemba lokushisa elibanzi. I-ALN Turamics nayo ibhekwa njengezinto ezithandwayo zewindi lokulethwa kwamandla wamandla we-vacuum acleacuum ngenxa ye-ekhishini yawo yesibili ekhishini ye-elektroni ekhishwe.

3. Silicon nitride (si3n4)

I-SI2N4 i-collally isibopho esihlanganisiwe nezinhlaka ezintathu zekristali: α-si3n4, β-si3n4, ne-γ-si3n4. Phakathi kwazo, i-α-si3n4 ne-β-si3n4 ziyizindlela ezivame kakhulu zekristalu, nesakhiwo se-hexagonal. Ukuvuselelwa okushisayo kweCrystal Crystal Si2n4 eyodwa kungafinyelela ku-400W / (m · k). Kodwa-ke, ngenxa yokudluliswa kokushisa kwe-phonon, kunezihlahla zokushisa ezifana nezikhala kanye nokungezelwa kwelinye izwe, futhi ukungcola kubangela ukuthi uPhonon ahlakaze ukwanda, ngakho-ke ukuthuthuka kwama-ceramics kwangempela kuma-20W / (m · k) . Ngokwenza kahle inqubo yokulingana kanye nenqubo yesono, ukuvumelanisa okushisayo kufinyelele ku-106W / (m · k). I-coefficion ethe xaxa ye-SI2N4 ye-SI2N4 imayelana ne-3.0 × 10-6 / c, okuhambisana kahle nezinto zokwakha ze-SI, ezizwakala kahle, okwenza i-sei3n4 ceramics ibe yinto ekhangayo ye-ceramic substrate impahla yamadivayisi aphezulu we-armal acleakinic electronic.

Umdwebo 3: I-Powder of Silicon Nitride

Phakathi kwama-surfate ase-ceramic akhona, ama-subramic we-ceramic we-ceramic abhekwa njengezinto ezinhle kakhulu ze-ceramic ezinezakhiwo ezinhle kakhulu ezinjengobulukhuni obuphezulu, amandla aphezulu okushisa, ukulimala okuphansi okushisayo, ukumelana nokuqina komzimba. Njengamanje, kuyathandwa ngokupakishwa kwe-IGBT Module futhi kancane kancane indawo esikhundleni sakwa-Al2o3 nase-ALN Ceramic Substrates.

I-4.Silicon Carbide (Sic)

I-Single Crystal Sic yaziwa njengesizukulwane sesithathu semiconductor, esinezinzuzo ze-Band Gap enkulu, i-High Breakdown Voltage, Ukusebenza okuphezulu okushisayo kanye nesivinini esikhulu se-elektroni.

Umdwebo 4: I-Powder of Silicon Carbide

Ngokungeza inani elincane le-beo kanye ne-b2o3 ku-sic ukwandisa ukumelana kwalo, bese ungeza izithasiselo ezihambisanayo zokushisa ngenhla ngaphezulu kwe-1900 ℃ usebenzisa ububanzi obungaphezulu kwama-arvemics. Ukuvuselelwa okushisayo kwe-ceramics ye-spic ngobumsulwa obuhlukile obulungiselelwe izindlela ezahlukahlukene ze-sonsoring kanye nezithasiselo zingu-100 ~ 490w / (m · k) emazingeni okushisa asekamelweni. Ngoba i-dielectric ihlala njalo ye-ceramics i-ceramics inkulu kakhulu, ilungele izinhlelo zokusebenza ezivame kakhulu, futhi ayilungele izinhlelo zokusebenza ezivame kakhulu.

5. Beryllia (beo)

I-beo yisakhiwo seWartzite kanye neseli uhlelo lwe-cubic crystal. Ukuqhutshwa kwalo okushisayo kuphezulu kakhulu, i-Beo Mass Fraction yama-ceramics angama-99%, emazingeni okushisa akhona, ukuqhutshwa kwayo okushisayo (Ukuvuselelwa okushisayo) kungafinyelela ama-310W / (m · Hhayi kuphela inomthamo wokudlulisa ukushisa okuphezulu kakhulu, kepha futhi ilahlekelwe yi-dielectric i-dielectric ihlala njalo kanye nokufakelwa okuphezulu kanye nempahla emishini, ama-ceramics ama-beos yizinto ezikhethiwe ekusetshenzisweni kwamadivaysi aphezulu namasekethe adinga ukuvumelanisa okuphezulu.

Crystal struture of BeO Ceramic

Umdwebo 5: Ukwakheka kwe-crystal ye-beryllia

Ukuvuselelwa okuphezulu okushisayo kanye nezimpawu zokulahlekelwa okuphansi ze-beo zingenakude kangaka ezinye izinto ze-ceramic, kepha i-beo inamaphutha asobala kakhulu, futhi i-powder yayo inobuthi kakhulu.

Njengamanje, izinto ezivame ukusetshenziswa kwe-ceramic substrate eChina ikakhulukazi ziyi-al2o3, i-ALN ne-SI2N4. I-ceramic substrate eyenziwe ngobuchwepheshe be-LTCC ingahlanganisa izingxenye ezingenamikhawulo njengabaphikisayo, ama-capacitors kanye ne-inductors esakhiweni esinezinhlangothi ezintathu. Ngokuphikisana nokuhlanganiswa kwama-semiconductors, okuyizinto ezisebenzayo ngokuyinhloko, i-LTCC inamakhono aphezulu we-3D ukuxhumanisa ama-wiring.